| PART |
Description |
Maker |
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| APT30GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| APT10043 APT10043JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT60GT60JR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 90A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| APT15GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 31A
|
ADPOW[Advanced Power Technology]
|
| APT50GF120JRD |
Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| SY100S838ZCTR SY100S838ZC SY100S838LZITR SY100S838 |
(÷1, ÷2/3) OR (÷2, ÷4/6) CLOCK GENERATION CHIP
(1 2/3) OR (2 4/6) CLOCK GENERATION CHIP
SMD-RELAY,2FORMC,5V,1A,140MW,S-S STB,10P
SOLDER WALL MT RECPT
CAP 0.018UF 500V 10% X7R SMD-1210 TR-7 PLATED-NI/SN
(±1, ±2/3) OR (±2, ±4/6) CLOCK GENERATION CHIP 100S SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
|
| APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 84A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
